metal oxide
美 
英
- n.金属氧化物
- 网络金属氧化物膜电阻；金属氧化物电阻；金属氧化物薄膜电晶体
英汉解释
例句
The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.
本发明提供一种可达到至少两个稳定的电阻率状态的电阻率切换金属氧化物或氮化物层。
Thermite is aluminum powder and a metal oxide which produces an aluminothermic reaction known as a thermite reaction.
铝热是铝粉，一种金属氧化剂，能产生我们所谓的铝热反应。
In addition, it was found that the metal oxide could be repeatedly used up to 5 cycles without any significant loss in its surface activity.
经测试后显示，研究中所使用的金属氧化物可重复使用五次，且金属的表面活性并不会被降低。
Recently, transition metal oxide catalysts used for oxidation of CO and hydrocarbons at low temperature have attracted much attention.
目前，非贵金属类的过渡金属氧化物催化剂用于CO和烃类的低温氧化受到了广泛关注。
These tiny semiconductors inject electrons into a metal oxide film, or "sensitize" it, to increase solar energy conversion.
这些微小的半导体把电子注入到金属氧化物薄膜中，或者说把它“敏化”，从而增强太阳能转换。
The metal oxide particles are preferably incorporated into the emulsion in the form of an aqueous dispersion.
金属氧化物颗粒优选以含水分散体的形式加入到乳液中。
and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain.
以及金属氧化物层，该金属氧化物层在该沟道层与该源极和该漏极之间形成。
The invention relates to a manufacture method of a trench type metal-oxide semiconductor device.
一种沟道式金属氧化物半导体元件的制作方法，其特征在于包括：提供一基板；
The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.
将半导体氧化层与金属氧化物层转化成一第一介电层。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管（MOSFET）的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The advantages, parameters, selection and installation of the metal-oxide arrester for composite transformers are introduced.
介绍了金属氧化物避雷器的优点、要参数及其配套于组合式变压器的选用原则和安装方式。
Inanother embodiment, the at least one metal compound is a metal oxide compound.
在另一实施方案中，至少一种金属化合物是金属氧化物化合物。
The metal-oxide-semiconductor ( MOS ) structure is the basis work for the complementary metal-oxide-semiconductor (CMOS) technology.
金氧半结构是一种存在于CMOS（互补式金氧半导体）制程中的基本的型式。
the catalyst is composed of transition metal oxide and rare earth oxide, so the cost of the catalyst is low.
催化剂以过渡金属氧化物和稀土氧化物构成，催化剂成本低。
They studied the pressure dependence of electrical properties of metal-oxide semiconductor in a separate paper.
他们在另一篇文章中给出关于金属氧化物半导体电学特性对压强的依赖关系的研究结果。
The metal oxide layer acts as a protecting layer to prevent deterioration of the phosphor due to ion bombardment.
该金属氧化物层起保护层的作用，以防止因离子轰击而破坏该磷光体。
The bonding properties of the metal-oxygen bridge accurately determined the reaction rates between metal-oxide and water.
金属与氧之间的键的性质决定了它们（金属氧化物）与水之间反应速率。
The system comprises metal -oxide-covered (SnO2) micro-hot plates and the necessary driving and signal-conditioning circuitry.
该系统包括金属氧化物覆盖（二氧化锡）微型热板、必要的驱动器及信号调节电路。
Bipolar (Si and SiGe), metal oxide semiconductor (MOS), and compound semiconductor technologies are discussed.
双极（硅锗），金属氧化物半导体（MOS），及化合物半导体技术进行了讨论。
As the metal oxide, molybdenum oxide, vanadium oxide, ruthenium oxide, rhenium oxide, and the like are preferably used.
作为金属氧化物，优选使用氧化钼、氧化钒、氧化钌、氧化铼等。
The invention is a method for producing a metal oxide catalyst useful for purifying exhaust gases and waste gases from combustion processes.
本发明是可用于纯化来自燃烧工艺的尾气和废气的金属氧化物催化剂的制备方法。
Both doping and quantum dot sensitization extend the visible light absorption of the metal oxide materials.
掺杂和量子点敏化都增强了金属氧化物材料对可见光的吸收。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
The catalyst consists of transition metal oxide loaded onto active carbon, alumina, silica, diatomite or molecular sieve.
催化剂组成为过渡金属氧化物负载于活性炭，氧化铝，氧化硅，硅藻土及分子筛上。
Removal of metal-oxide layers formed on stainless and carbon steel surfaces by excimer laser irradiation in various atmospheres.
在各种气体中用激发物激光辐照去除不锈钢和碳钢表面形成的金属氧化物层…[中国核科技信息与经济研究院]。
Preparation of slurry is the basal and crucial process when fabricating metal oxide gas sensors using screen-printing method.
浆料的制备是采用丝网印刷工艺制备金属氧化物半导体气敏传感器过程中的关键。
Through the gas absorption on the metal oxide surface, gas concentration change is measured.
通过气体吸附在金属氧化物半导体的表面，测定半导体电传导度的变化反映气体浓度。
It introduce the detecting method of metal-oxide surge arresters in service, detector and fault identification method.
介绍了金属氧化物避雷器各种带电检测方法、检测仪器以及避雷器故障的判定方法。
Heavy duty Silver Metal Oxide composition contacts ensure long electrical endurance .
银金属氧化物触点实现高的电寿命次数。
Synthesizing the metal-oxide nanoparticle with physical method and chemical method is studied.
着重从物理方法和化学方法两个方面介绍金属氧化物纳米颗粒的合成；
It was shown that rare-earth metal oxide effi-cientely improve the structure and wear resistance of laser strengthened area.
研究表明，稀土金属氧化物能够显著改善激光强化区的组织和耐磨性能。
This paper suggests a new method to measure the resistance leakage current wirelessly for metal-oxide surge arrester.
提出了一种测量金属氧化物避雷器阻性泄漏电流无线检测的新方法，该方法包括发送和接收两个装置。
The author analysed the dynamic characteristics and the simulation model building of metal oxide arrester(MOA).
在雷电冲击下，对金属氧化物避雷器的动态特性和仿真计算中等效模型的建立进行了分析。
The sorption agent has an integral type self-supporting metal oxide framework, high specific surface area and even aperture distribution.
该吸附剂具有整体式自支撑金属氧化物骨架结构，比表面积高且孔径分布均匀。
Mixed metal oxide(MMO) coated titanium anode was prepared by thermal decomposition process.
采用热分解方法制备了混合金属氧化物（MMO）涂层钛阳极。
metal-oxide surge arrester; testing instrument; standard device.
金属氧化物避雷器；测试仪；标准装置。
Surge arresters - Part 4 : metal-oxide surge arresters without gaps for a. c. systems.
避雷器.第4部分：交流电系统用无间隙金属氧化物避雷器
Mixed gate metal-oxide-semiconductor transistors are provided.
本发明提供了混合栅极的金属氧化物半导体晶体管。
Several studies have suggested that a metal-oxide surface may be viewd as a collection of clusters of different sizes and isomers.
研究表明金属氧化物表面是具有不同尺寸和形态的簇合物的近似集合体。
